K. Nehari

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari, Nicolas Cavassilas, J.L. Autran et al. · Solid-State Electronics · 2006 · 107 citations

Engineering, Electrical Engineering, Physics +17

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

Marc Bescond, K. Nehari, Jean‐Luc Autran et al. · 2005 · 64 citations

Engineering, Electrical Engineering, Physics +17

Full-band study of current across silicon nanowire transistors

K. Nehari, Nicolas Cavassilas, Fabienne Michelini et al. · Applied Physics Letters · 2007 · 44 citations

Engineering, Electrical Engineering, Physics +17

Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

Daniela Munteanu, Jacques Autran, S. Harrison et al. · Molecular Simulation · 2005 · 25 citations

Engineering, Electrical Engineering, Microelectronics +16

Tight-binding calculations of Ge-nanowire bandstructures

Marc Bescond, Nicolas Cavassilas, K. Nehari et al. · Journal of Computational Electronics · 2007 · 16 citations · Full text

Natural Sciences, Materials Science, Physics +14