R. Carruthers

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi et al. · 2004 · 156 citations

Engineering, Electrical Engineering, Materials Science +17

Role of oxygen vacancies in V/sub FB//V/sub t/ stability of pFET metals on HfO/sub 2/

E. Cartier, F. R. McFeely, Vijay Narayanan et al. · 2005 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Electromigration in 0.25 μm wide Cu line on W

C-K. Hu, K.Y Lee, L. Gignac et al. · Thin Solid Films · 1997 · 63 citations

Engineering, Electrical Engineering, Materials Science +9

Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films

W. Patrick, G. C. Schwartz, J. Chapple-Sokol et al. · Journal of The Electrochemical Society · 1992 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17