Manyam Pilla

Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz

Michael L. Schuette, A. Ketterson, Bo Song et al. · IEEE Electron Device Letters · 2013 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Wenshen Li, Kazuki Nomoto, Manyam Pilla et al. · IEEE Transactions on Electron Devices · 2017 · 102 citations

Engineering, Electrical Engineering, Materials Science +17

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

Wenshen Li, Huili Grace Xing, Kazuki Nomoto et al. · IEEE Transactions on Electron Devices · 2018 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications

P. Saunier, Michael L. Schuette, Tso-Min Chou et al. · IEEE Transactions on Electron Devices · 2013 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Activation of buried p-GaN in MOCVD-regrown vertical structures

Wenshen Li, Kazuki Nomoto, Kevin Lee et al. · Applied Physics Letters · 2018 · 53 citations · Full text

Engineering, Electrical Engineering, Materials Science +17