Statistics
Publications
19
Citations
643
H-Index
15
Active since
1995
D.L. Kencke is an author at Intel (United States) specializing in engineering, microelectronics, and applied physics.
Publications per year
1995–2022
19
19
MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology
O. Golonzka, Juan G. Alzate, Ümüt Arslan et al. · 2018 · 152 citations
Non-volatile Memory, Electrical Engineering, Key Features +15
The Role of Interfaces in Damascene Phase-Change Memory
D.L. Kencke, I. V. Karpov, Brian G. Johnson et al. · 2007 · 38 citations
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