Ibrahim Ban

3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

Han Wui Then, Changyang Huang, B. Krist et al. · 2019 · 99 citations

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then, M. Radosavljević, Pratik Koirala et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 55 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Floating Body Cell with Independently-Controlled Double Gates for High Density Memory

Ibrahim Ban, Uygar E. Avci, Uday Shah et al. · 2006 · 43 citations

Non-volatile Memory, Electrical Engineering, Idg Fbc Devices +15

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon-implanted channels

Ibrahim Ban, Mehmet C. Öztürk, E. Demirlioglu · IEEE Transactions on Electron Devices · 1997 · 33 citations

Electrical Engineering, Boron Diffusion, Engineering +13

Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX

Uygar E. Avci, Ibrahim Ban, D.L. Kencke et al. · 2008 · 31 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18