3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

Han Wui Then, Changyang Huang, B. Krist, +22

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then, M. Radosavljević, Pratik Koirala, +22

2021 IEEE International Electron Devices Meeting (IEDM)

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorAdvanced Scaling +13

Floating Body Cell with Independently-Controlled Double Gates for High Density Memory

Ibrahim Ban, Uygar E. Avci, Uday Shah, +3

Non-volatile MemoryElectrical EngineeringIdg Fbc DevicesIdg FbcEngineering +13

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon-implanted channels

Ibrahim Ban, Mehmet C. Öztürk, E. Demirlioglu

IEEE Transactions on Electron Devices

Electrical EngineeringBoron DiffusionEngineeringPhysicsNanoelectronics +11

Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX

Uygar E. Avci, Ibrahim Ban, D.L. Kencke, +1

Non-volatile MemoryEngineeringEmerging Memory TechnologyBody CellIntegrated Circuits +16

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

Han Wui Then, M. Radosavljević, Qiang Yu, +19

IEEE Microwave and Wireless Technology Letters

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +13

A scaled floating body cell (FBC) memory with high-k+metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond

Ibrahim Ban, Uygar E. Avci, D.L. Kencke, +1

Non-volatile MemoryEngineeringEmerging Memory TechnologyIntegrated CircuitsBest Retention Time +15

GaN and Si Transistors on 300mm Si(111) Enabled by 3D Monolithic Heterogeneous Integration

Han Wui Then, M. Radosavljević, P. Agababov, +20

Monolithic Heterogeneous IntegrationSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +13

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Han Wui Then, M. Radosavljević, Pratik Koirala, +25

2022 International Electron Devices Meeting (IEDM)

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +13

Effects of carbon implantation on generation lifetime in silicon

Ibrahim Ban, Mehmet C. Öztürk, K. N. Christensen, +1

Applied Physics Letters

Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsApplied Physics +8