O. Golonzka

High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors

P. Packan, Sheikh A. Akbar, M Armstrong et al. · 2009 · 187 citations

Engineering, Computer Engineering, Electrical Engineering +12

A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm<sup>2</sup> SRAM cell size in a 291Mb array

S. Natarajan, M Armstrong, M. Bost et al. · 2008 · 184 citations

Engineering, Computer Engineering, Electrical Engineering +16

MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

O. Golonzka, Juan G. Alzate, Ümüt Arslan et al. · 2018 · 156 citations

Engineering, Computer Engineering, Electrical Engineering +14

13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

Liqiong Wei, Juan G. Alzate, Ümüt Arslan et al. · 2019 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +15

13.2 A 3.6Mb 10.1Mb/mm² Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

Pulkit Jain, Ümüt Arslan, Meenakshi Sekhar et al. · 2019 · 130 citations

Engineering, Computer Engineering, Electrical Engineering +11