MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

Abstract

This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and a high level of design flexibility at low cost <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> . Embedded NVM technology presented here achieves 200°C 10-year retention capability combined with>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycle endurance and high die yield. Technology data retention, endurance and yield capabilities are demonstrated on 7.2Mbit arrays. We describe device-level MTJ characteristics, key integration features, cell characteristics, array operation specifics, as well as key yield milestones.