A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry, R. Chau, Changhwan Choi, +50

Nm Logic TechnologyEngineeringVlsi DesignComputer ArchitectureHigh Volume +16

High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors

P. Packan, Sheikh A. Akbar, M Armstrong, +36

Nm Logic TechnologyElectrical EngineeringEngineeringVlsi DesignNanoelectronics +11

A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm<sup>2</sup> SRAM cell size in a 291Mb array

S. Natarajan, M Armstrong, M. Bost, +40

EngineeringVlsi DesignChannel StrainIntegrated CircuitsSemiconductor Device +15

BTI reliability of 45 nm high-K + metal-gate process technology

Sangwoo Pae, M. Agostinelli, M. Brazier, +19

Materials EngineeringNmos BtiElectrical EngineeringEngineeringHardware Reliability +11

Erratic fluctuations of sram cache vmin at the 90nm process technology node

M. Agostinelli, J. Hicks, Jianzhong Xu, +19

Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringErratic Fluctuations +13

Effect of BTI Degradation on Transistor Variability in Advanced Semiconductor Technologies

Sangwoo Pae, J. Maiz, C. Prasad, +1

IEEE Transactions on Device and Materials Reliability

EngineeringTechnology ScalesAdvanced Semiconductor TechnologiesDefect ToleranceSemiconductor Device +15

Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices

Soon Young Lee, Il-Gon Kim, Sungmock Ha, +4

Low-power ElectronicsDevice ModelingElectrical EngineeringEngineeringVlsi Design +11

Hot carrier reliability characterization in consideration of self-heating in FinFET technology

Minjung Jin, Changze Liu, Jinju Kim, +9

EngineeringFinfet TechnologySemiconductor DeviceDc Hci StressNanoelectronics +16

Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics

Jaemin Kim, Jinsu Park, Geonju Yoon, +5

Materials Science in Semiconductor Processing

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied Physics +6

Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology

Sangwoo Pae, Ashwin Ashok, T. Ghani, +10

ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability +8