John F. Rembetski

Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches

G. S. Oehrlein, John F. Rembetski, E. H. Payne · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 112 citations

Engineering, Materials Engineering, Materials Science +15

Impact of polysilicon dry etching on 0.5 /spl mu/m NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

T. Gu, Murat Okandan, Osama O. Awadelkarim et al. · IEEE Electron Device Letters · 1994 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +16

Plasma-based dry etching techniques in the silicon integrated circuit technology

G. S. Oehrlein, John F. Rembetski · IBM Journal of Research and Development · 1992 · 42 citations

Engineering, Electrical Engineering, Physics +17

Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown

Xiang Li, Jen-Tai Hsu, P. Aum et al. · IEEE Electron Device Letters · 1993 · 30 citations

Natural Sciences, Electrical Engineering, Physics +17

Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures

Osama O. Awadelkarim, T. Gu, R. A. Ditizio et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 12 citations

Natural Sciences, Materials Science, Physics +17