T. Gu

Impact of polysilicon dry etching on 0.5 /spl mu/m NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

T. Gu, Murat Okandan, Osama O. Awadelkarim et al. · IEEE Electron Device Letters · 1994 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +16

Electrical properties of contact etched <i>p</i>-Si: A comparison between magnetically enhanced and conventional reactive ion etching

Osama O. Awadelkarim, P. I. Mikulan, T. Gu et al. · Journal of Applied Physics · 1994 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching

T. Gu, Osama O. Awadelkarim, S.J. Fonash et al. · IEEE Electron Device Letters · 1994 · 24 citations

Engineering, Electrical Engineering, Physics +17

Electronic states created in <i>p</i>-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

Osama O. Awadelkarim, T. Gu, P. I. Mikulan et al. · Applied Physics Letters · 1993 · 20 citations

Natural Sciences, Materials Science, Physics +17

Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures

Osama O. Awadelkarim, T. Gu, R. A. Ditizio et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 12 citations

Natural Sciences, Materials Science, Physics +17