P. I. Mikulan

Electrical properties of contact etched <i>p</i>-Si: A comparison between magnetically enhanced and conventional reactive ion etching

Osama O. Awadelkarim, P. I. Mikulan, T. Gu et al. · Journal of Applied Physics · 1994 · 30 citations

Materials Science, Electrical Engineering, Ion Implantation +15

Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron <i>n</i>-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen

Osama O. Awadelkarim, S.J. Fonash, P. I. Mikulan et al. · Journal of Applied Physics · 1996 · 28 citations

Latent Defects, Engineering, Hydrogen Passivation/depassivation +17

Electronic states created in <i>p</i>-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

Osama O. Awadelkarim, T. Gu, P. I. Mikulan et al. · Applied Physics Letters · 1993 · 20 citations

Point Defects, Engineering, Chemistry +20

Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Osama O. Awadelkarim, S.J. Fonash, P. I. Mikulan et al. · Microelectronic Engineering · 1995 · 18 citations

Electrical Engineering, Engineering, Hardware Reliability +10

Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures

Osama O. Awadelkarim, T. Gu, R. A. Ditizio et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 12 citations

Materials Science, Engineering, Physics +14