Osama O. Awadelkarim

Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes

K. Sarpatwari, Osama O. Awadelkarim, Martin Allen et al. · Applied Physics Letters · 2009 · 45 citations

Ii-vi Semiconductor, Richardson Constant, Electrical Engineering +10

Impact of polysilicon dry etching on 0.5 /spl mu/m NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

T. Gu, Murat Okandan, Osama O. Awadelkarim et al. · IEEE Electron Device Letters · 1994 · 44 citations

Electrical Engineering, Polysilicon Antenna Ratio, Engineering +13

Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon

Osama O. Awadelkarim, H. Weman, B. G. Svensson et al. · Journal of Applied Physics · 1986 · 42 citations

Semiconductors, Deep-level Transient Spectroscopy, Heat Treatment +13

Free radicals in x-irradiated single crystals of sucrose: a reexamination

Einar Sagstuen, Anders Lund, Osama O. Awadelkarim et al. · The Journal of Physical Chemistry · 1986 · 40 citations

X-ray Crystallography, Materials Science, Engineering +12

Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance

Weimin Chen, Osama O. Awadelkarim, B. Ḿonemar et al. · Physical Review Letters · 1990 · 38 citations

Engineering, Magnetic Resonance, Chemistry +17