S.J. Fonash - Concepedia

Author

S.J. Fonash

Pennsylvania State University

Also Known As

S J Fonash, S. Fonash, S. J. FONASH, S. J. Fonash, S. J. Fonash S. J. Fonash, S.J. Fonash, SJ Fonash

Publications

472

Citations

H-Index

Concepts

All Affiliations

Pennsylvania State University Westinghouse Electric (United States)Rockwell Automation (United States)Georgia Institute of Technology

About

S.J. Fonash is an author at Pennsylvania State University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	14	391
2	Applied Physics	14	14	391
3	Chemical Engineering	5	5	163
4	Chemistry	3	3	91
5	Natural Sciences	2	2	53

S.J. Fonash

Publications

391

Citations

H-Index

Page 1

	Year	Citations
A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon X. C. Mu, S.J. Fonash, G. S. Oehrlein, Journal of Applied Physics Materials ScienceCclf3/h2 Reactive IonChemical EngineeringIon ImplantationEngineering	1986	49
Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching Ranbir Singh, S.J. Fonash, S. Ashok, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringIon-beam EtchingSilicon On InsulatorProcessing-induced ChangesIon Implantation	1983	45
Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogen X. C. Mu, S.J. Fonash, A. Rohatgi, Applied Physics Letters Materials ScienceEnvironmental ChemistryChemical EngineeringOwn DamageEtched Silicon	1986	38
Observation of boron acceptor neutralization in silicon produced by CF4 reactive ion etching or Ar ion beam etching X. C. Mu, S.J. Fonash, Ranbir Singh Applied Physics Letters EngineeringChemistrySilicon On InsulatorPlasma ProcessingChemical Engineering	1986	33
High-barrier Schottky diodes on p-type silicon due to dry-etching damage X. C. Mu, S.J. Fonash IEEE Electron Device Letters EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device	1985	30
Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron <i>n</i>-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen Osama O. Awadelkarim, S.J. Fonash, P. I. Mikulan, Journal of Applied Physics Latent DefectsEngineeringHydrogen Passivation/depassivationSemiconductor DeviceSemiconductors	1996	28
Low Thermal Budget Poly-Si Thin Film Transistors on Glass Gang Liu, S.J. Fonash Japanese Journal of Applied Physics Materials ScienceElectrical EngineeringElectronic DevicesEngineeringApplied Physics	1991	27
Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment Mark W. Horn, J. M. Heddleson, S.J. Fonash Applied Physics Letters Chemical EngineeringIon ImplantationEngineeringHydrogen Ion BeamPhysics	1987	26
Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching T. Gu, Osama O. Awadelkarim, S.J. Fonash, IEEE Electron Device Letters Polysilicon Gate PlasmaElectrical EngineeringPoly-si Gate PlasmaEngineeringHot Electron Reliability	1994	24
Electronic states created in <i>p</i>-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen Osama O. Awadelkarim, T. Gu, P. I. Mikulan, Applied Physics Letters Point DefectsEngineeringChemistryReactive Ion EtchingSilicon On Insulator	1993	20

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