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Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching
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1983
Year
EngineeringIon-beam EtchingSilicon On InsulatorProcessing-induced ChangesIon ImplantationWafer Scale ProcessingIon BeamElectronic PackagingKr Ion-beam EtchingMaterials ScienceMaterials EngineeringElectrical EngineeringPrimary Ion BeamSemiconductor Device FabricationMicroelectronicsPlasma EtchingMicrofabricationSurface ScienceApplied Physics
A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.