V. Vidal

Statistics

Publications

Citations

257

H-Index

Active since

2003

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

Laboratoire d'Électronique des Technologies de l'Information

CEA Grenoble

Institut polytechnique de Grenoble

Université Grenoble Alpes

V. Vidal is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in materials science, materials engineering, and engineering.

Publications per year

2003–2012

Publications

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO<inf>2</inf> gate stack

V. Barral, T. Poiroux, F. Andrieu et al. · 2007 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling of the programming window distribution in multinanocrystals memories

L. Perniola, B. De Salvo, G. Ghibaudo et al. · IEEE Transactions on Nanotechnology · 2003 · 28 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width

F. Andrieu, O. Faynot, X. Garros et al. · 2006 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications

G. Molas, M. Bocquet, Julien Buckley et al. · 2007 · 24 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories

G. Molas, M. Bocquet, Julien Buckley et al. · Solid-State Electronics · 2007 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +14

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