Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Jacob Gavartin, David Muñoz Ramo, Alexander L. Shluger et al. · Applied Physics Letters · 2006 · 344 citations · Full text

Natural Sciences, Materials Science, Physics +12

Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

H.Y. Yu, Meng Li, B. J. Cho et al. · Applied Physics Letters · 2002 · 316 citations

Natural Sciences, Materials Science, Physics +16

Effect of Al inclusion in HfO₂ on the physical and electrical properties of the dielectrics

Weihang Zhu, T. Tamagawa, M. Gibson et al. · IEEE Electron Device Letters · 2002 · 262 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Technology for sub-50nm DRAM and NAND flash manufacturing

Kinam Kim · 2006 · 170 citations

Engineering, Computer Engineering, Electrical Engineering +17

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Yan Ny Tan, W. K. Chim, Wee Kiong Choi et al. · IEEE Transactions on Electron Devices · 2006 · 123 citations

Engineering, Materials Engineering, Materials Science +13