V. Maffini-Alvaro

Statistics

Publications

Citations

922

H-Index

Active since

2006

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

CEA Grenoble

Laboratoire d'Électronique des Technologies de l'Information

STMicroelectronics (France)

Institut polytechnique de Grenoble

V. Maffini-Alvaro is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in semiconductor devices, nanowires, and engineering.

Publications per year

2006–2016

Publications

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

Sylvain Barraud, R. Coquand, M. Cassé et al. · IEEE Electron Device Letters · 2012 · 145 citations

Engineering, Electrical Engineering, Materials Science +17

15nm-diameter 3D stacked nanowires with independent gates operation: &#x03A6;FET

C. Dupré, A. Hubert, Stéphane Bécu et al. · 2008 · 111 citations

Engineering, Electrical Engineering, Microelectronics +16

Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Sylvain Barraud, V. Lapras, Marie-Pierre Samson et al. · 2016 · 110 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

T. Ernst, C. Dupré, Christian Isheden et al. · 2006 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width

R. Coquand, Sylvain Barraud, M. Cassé et al. · 2012 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

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