Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

Abstract

Three- and four-level matrices of 15 times 70 nm Si Nano-Beams have been integrated with a novel CMOS gate-all-around process (GAA) down to 80 nm gate length. Thanks to this 3D-GAA extension of a Finfet process, a more than 5times higher current density per layout surface is achieved compared to planar transistors with the same gate stack (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN/Poly-Si). For the first time, several properties of this novel 3D architecture are explored: (i) HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN gate stack is integrated, (ii) electrons and holes mobilities are measured on 150 beams matrices (3 levels) and compared to those of planar transistors (hi) a sub-100nm channel width is demonstrated and (iv) specific 3D integration challenges like zipping between nano-beams are discussed