J. C. Barbé

Statistics

Publications

Citations

506

H-Index

Active since

2002

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

CEA Grenoble

Laboratoire d'Électronique des Technologies de l'Information

STMicroelectronics (France)

Institut polytechnique de Grenoble

J. C. Barbé is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, microelectronics, and electrical engineering.

Top concepts

EngineeringMicroelectronicsElectrical EngineeringApplied PhysicsNanoelectronicsDevice ModelingElectronic EngineeringPhysicsIntegrated CircuitsComputer Engineering

Publications per year

2002–2019

Publications

Performance and design considerations for gate-all-around stacked-NanoWires FETs

Sylvain Barraud, V. Lapras, B. Prévitali et al. · 2017 · 147 citations · Full text

Electrical Engineering, Gate-all-around Stacked-nanowires Fets, Engineering +10

Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

T. Ernst, C. Dupré, Christian Isheden et al. · 2006 · 61 citations

Engineering, Hfo2/tin Gate Stack, Finfet Process +19

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

T. Poiroux, O. Rozeau, P. Scheer et al. · IEEE Transactions on Electron Devices · 2015 · 59 citations

Device Modeling, Detailed Presentation, Electrical Engineering +13

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description

T. Poiroux, O. Rozeau, P. Scheer et al. · IEEE Transactions on Electron Devices · 2015 · 58 citations

Device Modeling, Detailed Presentation, Electrical Engineering +15

UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs

T. Poiroux, O. Rozeau, S. Martinie et al. · 2013 · 26 citations

Device Modeling, Ac Device Characteristics, Electrical Engineering +12

1–5 of 15