S. Suthram

Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ($\sim$1.5 GPa) Channel Stress

S. Suthram, John C. Ziegert, Toshikazu Nishida et al. · IEEE Electron Device Letters · 2007 · 89 citations

Engineering, Electrical Engineering, Materials Science +14

Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

C. Prasad, Lei Jiang, D. Singh et al. · 2013 · 84 citations

Engineering, Computer Engineering, Electrical Engineering +17

Future of Strained Si/Semiconductors in Nanoscale MOSFETs

Scott E. Thompson, S. Suthram, Yubing Sun et al. · 2006 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

S. Suthram, Muhammad M. Hussain, H. R. Harris et al. · IEEE Electron Device Letters · 2008 · 26 citations

Engineering, Electrical Engineering, Materials Science +12

Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

S. Suthram, Yubing Sun, P. Majhi et al. · 2008 · 25 citations

Engineering, Electrical Engineering, Materials Science +17