Future of Strained Si/Semiconductors in Nanoscale MOSFETs

Abstract

The maximum electron and hole mobility enhancement for uniaxial process-induced strained silicon is modeled and experimentally measured using a flexure based 4-point wafer bending jig. The highest known uniaxial stress to date is introduced into the channel of MOSFETs (applied mechanical stress of ~1.0GPa on samples with initial process stress of 1GPa for a total channel stress of ~2Pa). The maximum mobility enhancement from uniaxial stress is found to be greater than ~4.0 and ~1.7 times for holes and electrons, respectively. The physics behind the strain enhanced mobility is explained and future cases of technological importance to the industry are investigated