R. Annunziata

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Emerging Memory Technology, Phase-change Memories +17

Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

P. Zuliani, E. Varesi, Elisabetta Palumbo et al. · IEEE Transactions on Electron Devices · 2013 · 126 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +23

Phase change memory for automotive grade embedded NVM applications

P. Cappelletti, R. Annunziata, F. Arnaud et al. · Journal of Physics D Applied Physics · 2020 · 93 citations

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 90 citations · Full text

Engineering, Electronic Memory, Applied Physics +5

Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory

F. Arnaud, P. Zuliani, J.-P. Reynard et al. · 2018 · 72 citations

Non-volatile Memory, Electrical Engineering, Engineering +14