Anders Lundskog

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 102 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

G.J. Riedel, James W. Pomeroy, K.P. Hilton et al. · IEEE Electron Device Letters · 2009 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Anders Lundskog, Chih‐Wei Hsu, K. F. Karlsson et al. · Light Science & Applications · 2014 · 74 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays

Chih‐Wei Hsu, Anders Lundskog, K. F. Karlsson et al. · Nano Letters · 2011 · 59 citations

Engineering, Materials Engineering, Materials Science +16

Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN

A. Kakanakova‐Georgieva, Rafal Ciechonski, Urban Forsberg et al. · Crystal Growth & Design · 2008 · 53 citations

Engineering, Materials Engineering, Materials Science +17