H. Feldis

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Emerging Memory Technology, Phase-change Memories +17

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 90 citations · Full text

Engineering, Electronic Memory, Applied Physics +5

Experimental and theoretical study of electrode effects in HfO<inf>2</inf> based RRAM

C. Cagli, Julien Buckley, V. Jousseaume et al. · 2011 · 71 citations · Full text

Engineering, Emerging Memory Technology, Rram Devices +17

N-doped GeTe as performance booster for embedded Phase-Change Memories

A. Fantini, V. Sousa, L. Perniola et al. · 2010 · 52 citations

Engineering, Computer Architecture, Phase-change Memories +17

Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology

M. Fayolle, J. Torrès, G. Passemard et al. · Microelectronic Engineering · 2002 · 26 citations

Materials Science, Electrical Engineering, Engineering +8