D. Werho

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 165 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

Dina H. Triyoso, R. I. Hegde, Stefan Zollner et al. · Journal of Applied Physics · 2005 · 79 citations

Engineering, Solid-state Chemistry, Hfo2 Films +18

Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 69 citations

Engineering, Various Pre-deposition Treatments, Silicon On Insulator +16

Evaluation of amine‐ and amide‐terminated self‐assembled monolayers as ‘Molecular glues’ for Au and SiO ₂ substrates

Andrew E. Hooper, D. Werho, Theresa Hopson et al. · Surface and Interface Analysis · 2001 · 55 citations

Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces

P. Pianetta, Katharina Baur, Anoop Pratap Singh et al. · Thin Solid Films · 2000 · 40 citations

Electrical Engineering, Synchrotron Radiation, Engineering +13