Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan, +14

Journal of The Electrochemical Society

Aluminium NitrideEngineeringThin Film Process TechnologyChemical DepositionGate Dielectric +16

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

Dina H. Triyoso, R. I. Hegde, Stefan Zollner, +11

Journal of Applied Physics

EngineeringSolid-state ChemistryHfo2 FilmsAnnealed Hafnium DioxideEpitaxial Growth +16

Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant, +12

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringVarious Pre-deposition TreatmentsSilicon On InsulatorSemiconductor DeviceChemical Engineering +14

Evaluation of amine‐ and amide‐terminated self‐assembled monolayers as ‘Molecular glues’ for Au and SiO ₂ substrates

Andrew E. Hooper, D. Werho, Theresa Hopson, +1

Surface and Interface Analysis

Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces

P. Pianetta, Katharina Baur, Anoop Pratap Singh, +4

Thin Solid Films

Electrical EngineeringSynchrotron RadiationEngineeringRadiation DetectionSynchrotron Radiation Research +11

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

Dina H. Triyoso, R. Gregory, J. Schaeffer, +4

Journal of Applied Physics

EngineeringHfo2 High-k DielectricsThin Film Process TechnologyChemical DepositionAtomic Layer +18

Laboratory and synchrotron radiation total-reflection X-ray fluorescence: new perspectives in detection limits and data analysis

Katharina Baur, S. Brennan, B Burrow, +2

Spectrochimica Acta Part B Atomic Spectroscopy

Data AnalysisX-ray SpectroscopyHealth SciencesEngineeringSpectroscopy +11

Investigations into the Mechanism of Adsorption of Carbon Nanotubes onto Aminopropylsiloxane Functionalized Surfaces

T. Burgin, Justin Lewenstein, D. Werho

Langmuir

EngineeringIon Exchange MechanismChemistryChemical EngineeringCarbon-based Material +14

Improvement in gate oxide integrity on thin-film silicon-on-insulator substrates by lateral gettering

Seon‐Eui Hong, T. Wetteroth, Hang‐Sik Shin, +4

Applied Physics Letters

Thin-film Silicon-on-insulator SubstratesEngineeringGate Oxide IntegritySilicon On InsulatorSemiconductor Device +15

Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

J.C. Banks, Barney L. Doyle, J. A. Knapp, +5

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Electrical EngineeringIon ImplantationEngineeringAnalytical InstrumentationMass Spectrometry +9