Ming Pan

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song et al. · Applied Physics Letters · 2015 · 190 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Lei Li, Kazuki Nomoto, Ming Pan et al. · IEEE Electron Device Letters · 2020 · 116 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +10

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Wenshen Li, Kazuki Nomoto, Manyam Pilla et al. · IEEE Transactions on Electron Devices · 2017 · 100 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

&lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;${\rm SiN}_{x}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;/InAlN/AlN/GaN MIS-HEMTs With 10.8 &lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;${\rm THz}\cdot{\rm V}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Johnson Figure of Merit

Brian P. Downey, David J. Meyer, D. S. Katzer et al. · IEEE Electron Device Letters · 2014 · 73 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Xiaodong Wang, Weida Hu, Ming Pan et al. · Journal of Applied Physics · 2014 · 68 citations

Photoresponse Characteristics, Back-illuminated Separate Absorption, Electrical Engineering +15