Lei Li

Next generation electronics on the ultrawide-bandgap aluminum nitride platform

Austin Hickman, Reet Chaudhuri, Samuel James Bader et al. · Semiconductor Science and Technology · 2021 · 118 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +11

GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Lei Li, Kazuki Nomoto, Ming Pan et al. · IEEE Electron Device Letters · 2020 · 116 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +10

Experimental Demonstration of 448-Gbps+ DMT Transmission over 30-km SMF

Toshiki Tanaka, Masato Nishihara, Tomoo Takahara et al. · Optical Fiber Communication Conference · 2014 · 100 citations

Photonics, Electrical Engineering, 448-Gbps+ Dmt Transmission +14

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

Austin Hickman, Reet Chaudhuri, Lei Li et al. · IEEE Journal of the Electron Devices Society · 2020 · 84 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Discrete Multi-Tone for 100 Gb/s Optical Access Networks

Tomoo Takahara, Toshiki Tanaka, Masato Nishihara et al. · Optical Fiber Communication Conference · 2014 · 50 citations

Free-space Optical Network, Photonics, Experimental Results +14