P. Jamison

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 195 citations

Engineering, Vlsi Design, Silicon On Insulator +16

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics

Min Yang, E. P. Gusev, M. Ieong et al. · IEEE Electron Device Letters · 2003 · 164 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2009 · 104 citations

Low-power Electronics, Electrical Engineering, Sige Rsd +12

Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/

E. Cartier, F. R. McFeely, Vijay Narayanan et al. · 2005 · 65 citations

Engineering, Oxygen Vacancies, Oxidation Resistance +17

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

T. C. Chen, G. Shahidi, Supratik Guha et al. · 2006 · 65 citations

Iiib Elements, Wide-bandgap Semiconductor, Engineering +18