B. J. Pawlak

Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

Hans Mertens, R. Ritzenthaler, Hiroaki Arimura et al. · 2015 · 53 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

Ray Duffy, G. Curatola, B. J. Pawlak et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 43 citations · Full text

Device Modeling, Electrical Engineering, Dose Retention +11

Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

Jay Mody, Ray Duffy, Pierre Eyben et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 31 citations

Engineering, Fin Field-effect-transistor-based Structures, Silicon On Insulator +21

Conformal Doping of FINFETs: a Fabrication and Metrology Challenge

W. Vandervorst, J.-L. Everaert, Eveline Rosseel et al. · AIP conference proceedings · 2008 · 25 citations

Materials Science, Semiconductor Technology, Plasma Immersion Doping +15

Probing doping conformality in fin shaped field effect transistor structures using resistors

Wilfried Vandervorst, M. Jurczak, J.-L. Everaert et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 13 citations

Device Modeling, Plasma Immersion, Electrical Engineering +10