G. Curatola

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

Luca Sayadi, Giuseppe Iannaccone, Sébastien Sicre et al. · IEEE Transactions on Electron Devices · 2018 · 234 citations · Full text

Wide-bandgap Semiconductor, Gate Contact, Electrical Engineering +13

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

G. Verzellesi, Luca Morassi, Gaudenzio Meneghesso et al. · IEEE Electron Device Letters · 2014 · 113 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

M.J.H. van Dal, Nadine Collaert, G. Doornbos et al. · 2007 · 79 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +18

Simulation of self-heating effects in different SOI MOS architectures

M. Braccioli, G. Curatola, Yiqun Yang et al. · Solid-State Electronics · 2009 · 46 citations

Electrical Engineering, Engineering, Self-heating Effects +9

Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

Ray Duffy, G. Curatola, B. J. Pawlak et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 43 citations · Full text

Device Modeling, Electrical Engineering, Dose Retention +11