G. Curatola - Concepedia

Author

G. Curatola

Infineon Technologies (Austria)

Also Known As

Curatola, G., G Curatola, G. Curatola, Gilberto Curatola

Publications

959

Citations

H-Index

Concepts

All Affiliations

Infineon Technologies (Austria)University of Pisa NXP (Belgium)IMEC University of Padua

About

G. Curatola is an author at Infineon Technologies (Austria) specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	851
2	Electrical Engineering	15	21	851
3	Applied Physics	13	19	808
4	Computer Engineering	4	4	111
5	Materials Engineering	1	1	36

G. Curatola

Publications

861

Citations

H-Index

Page 1

	Year	Citations
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs Luca Sayadi, Giuseppe Iannaccone, Sébastien Sicre, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorGate ContactElectrical EngineeringThreshold Voltage StabilityEngineering	2018	234
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs G. Verzellesi, Luca Morassi, Gaudenzio Meneghesso, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsPulse Behavior	2014	113
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography M.J.H. van Dal, Nadine Collaert, G. Doornbos, EngineeringIntegrated CircuitsInterconnect (Integrated Circuits)Semiconductor DeviceWafer Scale Processing	2007	79
Simulation of self-heating effects in different SOI MOS architectures M. Braccioli, G. Curatola, Yiqun Yang, Solid-State Electronics Electrical EngineeringEngineeringSelf-heating EffectsBias Temperature InstabilityNumerical Simulation	2009	46
Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance Ray Duffy, G. Curatola, B. J. Pawlak, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Device ModelingElectrical EngineeringDose RetentionEngineeringTriple Gate Finfet	2008	43
PSP-based scalable compact FinFET model G. Curatola, R. van Langevelde, G. Gildenblat Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringCircuit Design	2007	37
Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit G. Curatola, Gianluca Fiori, Giuseppe Iannaccone Solid-State Electronics Device ModelingBallistic LimitElectrical EngineeringSimulation ChallengesEngineering	2003	36
The role of silicon, silicon carbide and gallium nitride in power electronics Michael Treu, E. Vecino, M. Pippan, Materials EngineeringSemiconductor TechnologyElectrical EngineeringLatest Gallium NitrideEngineering	2012	36
Gatestacks for scalable high-performance FinFETs G. Vellianitis, J. Pétry, Bartek Pawlak, EngineeringVlsi DesignExcellent PerformanceComputer ArchitectureIntegrated Circuits	2007	31
The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers Luca Sayadi, Giuseppe Iannaccone, Oliver D. Häberlen, IEEE Transactions on Electron Devices Electrical EngineeringGan-on-si Epitaxial StackEngineeringLeakage CurrentPhysics	2017	26

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