Ryoung-Han Kim

The use of EUV lithography to produce demonstration devices

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2008 · 42 citations

Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer

Thomas I. Wallow, Alden Acheta, Yuansheng Ma et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2007 · 28 citations

Engineering, Electron-beam Lithography, Photoresist Ler +16

Comparison of left and right side line edge roughness in lithography

Lei Sun, Nicole Saulnier, Genevieve Beique et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2016 · 20 citations

Lithography Process, Engineering, Electron-beam Lithography +8

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation

Chi‐Chun Liu, Cristina Estrada-Raygoza, Hong He et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2014 · 19 citations

Electrical Engineering, Wafer Scale Processing, Engineering +14

Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs

Ryoung-Han Kim, Obert R. Wood, Michael Crouse et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2016 · 18 citations

Optical Engineering, Critical Imaging Layers, Sraf Placement Optimization +15