R. Schreutelkamp

pMOSFET with 200% mobility enhancement induced by multiple stressors

L. Washington, F. Nouri, S. Thirupapuliyur et al. · IEEE Electron Device Letters · 2006 · 68 citations

Engineering, Electrical Engineering, Materials Science +13

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Geert Eneman, Peter Verheyen, R. Rooyackers et al. · IEEE Transactions on Electron Devices · 2006 · 57 citations

Engineering, Electrical Engineering, Materials Science +13

Layout impact on the performance of a locally strained PMOSFET

S. Eneman, Peter Verheyen, R. Rooyackers et al. · 2005 · 44 citations

Engineering, Electrical Engineering, Microelectronics +16

Manufacturable Processes for $\leq$ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

Atif Noori, Mihaela Balseanu, Pieter Boelen et al. · IEEE Transactions on Electron Devices · 2008 · 39 citations

Engineering, Computer Engineering, Electrical Engineering +17

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

T. Noda, Wilfried Vandervorst, Susan B. Felch et al. · 2007 · 22 citations

Engineering, Materials Engineering, Materials Science +17