Concepedia

Author

M. Elahy

Texas Instruments (United States)

Also Known As

M. ELAHY, M. Elahy

16

Publications

471

Citations

9

H-Index

14

Concepts

All Affiliations

Texas Instruments (United States)
ME

About

M. Elahy is an author at Texas Instruments (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

9

9

439

2

Electrical Engineering

9

9

439

3

Computer Engineering

7

7

340

4

Applied Physics

5

5

337

5

Computer Architecture

5

5

281

M. Elahy

×

9

Publications

439

Citations

9

H-Index

YearCitations

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee,

IEEE Transactions on Electron Devices

1985

190

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

G. Pollack, W.F. Richardson, S.D.S. Malhi,

IEEE Electron Device Letters

1984

84

A trench transistor cross-point DRAM cell

W.F. Richardson, D.M. Bordelon, G. Pollack,

1985

47

A 4-Mbit DRAM with trench-transistor cell

A.H. Shah, C. Wang, R.H. Womack,

IEEE Journal of Solid-State Circuits

1986

31

A 4Mb DRAM with cross point trench transistor cell

A.H. Shah, C. Wang, R.H. Womack,

1986

25

Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee,

IEEE Journal of Solid-State Circuits

1985

23

Trench capacitor leakage in Mbit DRAMs

M. Elahy, H. Shichijo, P.K. Chatterjee,

1984

15

Trench capacitor design issues in VLSI DRAM cells

K. V. Rao, M. Elahy, D.M. Bordelon,

1986

12

TITE RAM: A New SOI DRAM Gain Cell for Mbit DRAM's

H. Shichijo, S.D.S. Malhi, A.H. Shah,

1984

12

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