David Hellin

Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Frederik Leys, Renaud Bonzom, B. Kaczer et al. · Materials Science in Semiconductor Processing · 2006 · 53 citations

Materials Science, Ge Surface Segregation, Engineering +9

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

David Hellin, Stefan De Gendt, Nick Valckx et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 2006 · 47 citations

Chemical Engineering, X-ray Spectroscopy, Engineering +8

Saturation effects in TXRF on micro-droplet residue samples

David Hellin, Wim Fyen, Jens Rip et al. · Journal of Analytical Atomic Spectrometry · 2004 · 45 citations

Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Riikka L. Puurunen, Annelies Delabie, Sven Van Elshocht et al. · Applied Physics Letters · 2005 · 43 citations

Materials Science, Nanometer-thin Films, Hafnium Oxide +13

H 2 S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface

Michel Houssa, Daniël Nelis, David Hellin et al. · Applied Physics Letters · 2007 · 33 citations

Engineering, Ge Surface, Vacuum Device +16