Jens Rip

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Annelies Delabie, Sonja Sioncke, Jens Rip et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2011 · 61 citations

Aluminium Nitride, Engineering, Crystal Growth Technology +19

Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Frederik Leys, Renaud Bonzom, B. Kaczer et al. · Materials Science in Semiconductor Processing · 2006 · 53 citations

Materials Science, Ge Surface Segregation, Engineering +9

Saturation effects in TXRF on micro-droplet residue samples

David Hellin, Wim Fyen, Jens Rip et al. · Journal of Analytical Atomic Spectrometry · 2004 · 45 citations

Validation of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers

David Hellin, Jens Rip, Sophia Arnauts et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 2004 · 30 citations

Materials Science, Chemical Engineering, Silicon Wafers +11

Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge

Roger Loo, Laurent Souriau, Patrick Ong et al. · Journal of Crystal Growth · 2011 · 30 citations

Semiconductor Technology, Electrical Engineering, Epitaxial Growth +8