Patrick Ong

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve Teugels et al. · IEEE Electron Device Letters · 2014 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Electrical Engineering, Materials Science +15

Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform

Shankar Kumar Selvaraja, Peter De Heyn, Gustaf Winroth et al. · Optical Fiber Communication Conference · 2014 · 78 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Niamh Waldron, Gang Wang, Ngoc Duy Nguyen et al. · ECS Transactions · 2012 · 43 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

John B. Matovu, Patrick Ong, Leonardus H. A. Leunissen et al. · ECS Journal of Solid State Science and Technology · 2013 · 41 citations

Engineering, Materials Engineering, Materials Science +17