B. Holybee

Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

Kevin P. O’Brien, C. J. Dorow, Ashish Verma Penumatcha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 109 citations

Engineering, Transition Metal Dichalcogenide, Optoelectronic Devices +20

3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

Han Wui Then, Changyang Huang, B. Krist et al. · 2019 · 99 citations

Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

C. J. Dorow, Ashish Verma Penumatcha, A. Kitamura et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 47 citations

Engineering, Two-dimensional Materials, Channel Fet +19

300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

K. Maxey, Carl H. Naylor, Kevin P. O’Brien et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 31 citations

Engineering, More Moore, Two-dimensional Materials +20

GaN and Si Transistors on 300mm Si(111) Enabled by 3D Monolithic Heterogeneous Integration

Han Wui Then, M. Radosavljević, P. Agababov et al. · 2020 · 24 citations

Monolithic Heterogeneous Integration, Semiconductor Technology, Electrical Engineering +15