300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

Abstract

Two-dimensional (2D) materials have garnered significant attention in the past decade as a crucial enabler for "More Moore" scaling. Here we demonstrate and characterize metallo-organic chemical vapor deposition (MOCVD) of 2D materials directly on a 300 mm Si platform, including p-type WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for the first time. We establish process conditions for MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (M = Mo, W; X = S, Se) targeted for both BEOL- and FEOL-application spaces. FETs fabricated on 300 mm n-type MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> film show appreciable variability (σ/μ ~ 0.2) that in-creases with scaled geometry. Our as-deposited MOCVD WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> pMOS devices achieve a record I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> ~100 μA/μm. We also exhibit advancement in patterned convertible templating (PCT) that is ultimately compatible with 300 mm technologies.