C. J. Dorow

Process integration and future outlook of 2D transistors

Kevin O’Brien, Carl H. Naylor, C. J. Dorow et al. · Nature Communications · 2023 · 110 citations · Full text

Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

Kevin P. O’Brien, C. J. Dorow, Ashish Verma Penumatcha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 109 citations

Engineering, Transition Metal Dichalcogenide, Optoelectronic Devices +20

Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

C. J. Dorow, Ashish Verma Penumatcha, A. Kitamura et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 47 citations

Engineering, Two-dimensional Materials, Channel Fet +19

300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

K. Maxey, Carl H. Naylor, Kevin P. O’Brien et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 31 citations

Engineering, More Moore, Two-dimensional Materials +20

Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS₂, WS₂, & WSe₂

C. J. Dorow, T. Schram, Quentin Smets et al. · 2023 · 27 citations