A. Kitamura

Process integration and future outlook of 2D transistors

Kevin O’Brien, Carl H. Naylor, C. J. Dorow et al. · Nature Communications · 2023 · 110 citations · Full text

Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

C. J. Dorow, Ashish Verma Penumatcha, A. Kitamura et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 47 citations

Engineering, Two-dimensional Materials, Channel Fet +19

300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

K. Maxey, Carl H. Naylor, Kevin P. O’Brien et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 31 citations

Engineering, More Moore, Two-dimensional Materials +20

Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length

Wouter Mortelmans, Pratyush Buragohain, Carly Rogan et al. · 2024 · 18 citations

Reliability Assessment of Double-Gated Wafer-Scale MoS₂ Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses

Alexandros Provias, Theresia Knobloch, A. Kitamura et al. · 2023 · 11 citations