J. Kluth

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

R. Carter, J. Mazurier, Luca Pirro et al. · 2016 · 283 citations · Full text

Engineering, Vlsi Design, Radio Frequency +16

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

W.-H. Lee, Anya M. Waite, H. Nii et al. · 2006 · 55 citations

Engineering, Vlsi Design, Integrated Circuits +19

Bulk Properties of MOCVD-Deposited HfO[sub 2] Layers for High k Dielectric Applications

Sven Van Elshocht, Mikhaı̈l R. Baklanov, Bert Brijs et al. · Journal of The Electrochemical Society · 2004 · 18 citations

Organic Precursor, Thin Film Physics, Engineering +22

Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges

Dina H. Triyoso, R. Carter, J. Kluth et al. · 2016 · 14 citations

Engineering, Vlsi Design, Computer Architecture +17

Process Integration Issues with Spike, Flash and Laser Anneal Implementation for 90 and 65 NM Technologies

T. Feudel, L. Herrmann, M. Herden et al. · 2006 · 10 citations