M. Lerme

High-frequency performance of submicrometer channel-length silicon MOSFETs

C. Raynaud, J. Gautier, G. Guégan et al. · IEEE Electron Device Letters · 1991 · 43 citations

Low-power Electronics, Electrical Engineering, Engineering +14

Positive resist image by dry etching: New dry developed positive working system for electron beam and deep ultraviolet lithography

Christophe Pierrat, S. Tedesco, F. Vinet et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 33 citations

Electrical Engineering, High Resolution, Engineering +14

Adaptation of an ion implanter on a 100 kV electron microscope for in situ irradiation experiments

M.-O. Ruault, M. Lerme, B. Jouffrey et al. · Journal of Physics E Scientific Instruments · 1978 · 13 citations

Materials Science, Kv Electron Microscope, Ion Implantation +14

Re-examination of indium implantation for a low power 0.1 μm technology

Pierre Bouillon, F. Bénistant, T. Skotnicki et al. · 2002 · 13 citations

Engineering, μM Technology, Wireless Implantable Device +17

PRIME process for deep UV and E-beam lithography

Christophe Pierrat, S. Tedesco, F. Vinet et al. · Microelectronic Engineering · 1990 · 12 citations

Optical Materials, Engineering, Electron-beam Lithography +6