G. Guégan

Coulomb blockade in low-mobility nanometer size Si MOSFET’s

M. Sanquer, Michael Specht, L. Ghenim et al. · Physical review. B, Condensed matter · 2000 · 47 citations · Full text

Natural Sciences, Electrical Engineering, Physics +17

High-frequency performance of submicrometer channel-length silicon MOSFETs

C. Raynaud, J. Gautier, G. Guégan et al. · IEEE Electron Device Letters · 1991 · 44 citations

Engineering, Electrical Engineering, Microelectronics +16

Low frequency noise characterization of 0.25 μm Si CMOS transistors

T. Boutchacha, G. Ghibaudo, G. Guégan et al. · Journal of Non-Crystalline Solids · 1997 · 36 citations

Engineering, Electrical Engineering, Microelectronics +13

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF ₂ pockets

S. Deleonibus, C. Caillat, G. Guégan et al. · IEEE Electron Device Letters · 2000 · 34 citations

Engineering, Electrical Engineering, Electronic Materials +14

Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices

G. Bertrand, S. Deleonibus, B. Prévitali et al. · Solid-State Electronics · 2004 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +15