Dominic Jabs

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part II: Theory

Markus Jech, Bianka Ullmann, G. Rzepa et al. · IEEE Transactions on Electron Devices · 2018 · 37 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {<i>V</i> _G, <i>V</i> _D} Bias Space: Implications and Peculiarities

Markus Jech, G. Rott, H. Reisinger et al. · IEEE Transactions on Electron Devices · 2020 · 35 citations · Full text

Engineering, Materials Science, Physics +13

Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

Hamed Kamrani, Dominic Jabs, Vincenzo d’Alessandro et al. · IEEE Transactions on Electron Devices · 2017 · 25 citations

Engineering, Electrical Engineering, Materials Engineering +17

First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

Markus Jech, Stanislav Tyaginov, B. Kaczer et al. · 2019 · 14 citations

Natural Sciences, Materials Science, Physics +17

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

Markus Jech, Al-Moatasem El-Sayed, Stanislav Tyaginov et al. · Physical Review Applied · 2021 · 11 citations

Engineering, Electrical Engineering, Physics +17