G. Rott

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {<i>V</i> _G, <i>V</i> _D} Bias Space: Implications and Peculiarities

Markus Jech, G. Rott, H. Reisinger et al. · IEEE Transactions on Electron Devices · 2020 · 35 citations · Full text

Engineering, Materials Science, Physics +13

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental

Bianka Ullmann, Markus Jech, Katja Puschkarsky et al. · IEEE Transactions on Electron Devices · 2018 · 27 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16

Physical modeling of NBTI: From individual defects to devices

G. Rzepa, Wolfgang Goes, G. Rott et al. · 2014 · 22 citations

Engineering, Electrical Engineering, Physics +17

NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

Kay-Uwe Giering, Katja Puschkarsky, H. Reisinger et al. · IEEE Transactions on Electron Devices · 2019 · 22 citations · Full text

Engineering, Electrical Engineering, Physics +15

An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps

Katja Puschkarsky, H. Reisinger, G. Rott et al. · IEEE Transactions on Electron Devices · 2019 · 15 citations

Engineering, Electrical Engineering, Physics +16