W. Storm

Analysis of stoichiometry and oxide growth of HF treated GaAs (100) by x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

W. Storm, D. Wolany, Florian Schröder et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 21 citations

Engineering, Oxidation Resistance, Oxide Electronics +15

Surface and in-depth analysis of hydrogenated carbon layers on silicon and germanium by mass and electron spectroscopy

P. Sander, M. Altebockwinkel, W. Storm et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 21 citations

Hydrogenated Carbon Layers, Engineering, Vacuum Device +23

Controlled Deposition of Organic Contamination and Removal with Ozone-Based Cleanings

M. Claes, Stefan De Gendt, Conny Kenens et al. · Journal of The Electrochemical Society · 2001 · 17 citations

Engineering, Decontamination, Air Quality +20

Kinetics and Mechanism of the Etching of CoSi2 in HF‐based Solutions

Mikhaı̈l R. Baklanov, I. A. Badmaeva, R. A. Donaton et al. · Journal of The Electrochemical Society · 1996 · 13 citations

Materials Science, Chemical Engineering, Engineering +15

Analysis of Time-Dependent Haze on Silicon Surfaces

N. Münter, Bernd O. Kolbesen, W. Storm et al. · Journal of The Electrochemical Society · 2003 · 11 citations

Engineering, Chemistry, Chemical Deposition +19