J. Heijlen

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 69 citations

Engineering, Materials Engineering, Materials Science +7

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V_t > 0 V and I_on > 30 µA/µm

Subhali Subhechha, Nouredine Rassoul, A. Belmonte et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 47 citations

Engineering, Electrical Engineering, Materials Science +13

Damage Reduction and Sealing of Low-k Films by Combined He and NH[sub 3] Plasma Treatment

Adam Urbanowicz, Mikhaı̈l R. Baklanov, J. Heijlen et al. · Electrochemical and Solid-State Letters · 2007 · 40 citations

Natural Sciences, Materials Science, Physics +17

First demonstration of sub-12 nm L g gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices

Subhali Subhechha, Nouredine Rassoul, Attilio Belmonte et al. · Symposium on VLSI Technology · 2021 · 13 citations

Engineering, Electrical Engineering, Materials Science +13

Monolithic-CFET with Direct Backside Contact to Source/Drain and Backside Dielectric Isolation

A. Vandooren, Karen Stiers, Chuanxiang Sheng et al. · 2024 · 11 citations

Engineering, Electrical Engineering, Microelectronics +10