W. Hösler

Correlation between domain boundaries and surface steps: A scanning-tunneling-microscopy study on reconstructed Pt(100)

R. Jürgen Behm, W. Hösler, E. Ritter et al. · Physical Review Letters · 1986 · 134 citations

Engineering, Microscopy, Step Direction +18

Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data

M. Schuster, P O Gervais, B. Jobst et al. · Journal of Physics D Applied Physics · 1999 · 134 citations

Wide-bandgap Semiconductor, Engineering, Chemical Composition +17

Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy

R. Averbeck, Lutz Geelhaar, H. Riechert et al. · Journal of Applied Physics · 2003 · 124 citations

Materials Science, Growth Diagram, Aluminium Nitride +14

Depth resolution in Auger depth profile analysis of aluminum metallization in microelectronics: The effect of crystalline texture

W. Pamler, K. Wangemann, S. Kampermann et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1990 · 55 citations

Materials Engineering, Materials Science, Aluminum Metallization +11

LEED analysis of a dense lead monolayer on copper (100)

W. Hösler, W. Moritz · Surface Science · 1986 · 52 citations

Materials Science, Materials Engineering, Surface Characterization +11