JSTS Journal of Semiconductor Technology and Science · 2001 · 27 citations · 15 references
EngineeringIntegrated CircuitsInterconnect (Integrated Circuits)Electromagnetic CompatibilityMicro-electromechanical SystemMagnetic Data StorageAdvanced Packaging (Semiconductors)InstrumentationElectronic PackagingNatural FrequencyElectrical EngineeringPlanar Copper CoilsMagnetic DeviceCopper CoilsProbe-based Data StorageMicroelectronicsMicrofabricationInstrument ScienceBioelectronicsApplied PhysicsElectronic Instrumentation
An electromagnetic micro x-y stage for probe-based data storage (PDS) has been fabricated. The x-y stage consists of a silicon body inside which planar copper coils are embedded, a glass substrate bonded to the silicon body, and eight permanent magnets. The dimensions of flexures and copper coils were determined to yield 100 µm in x and y directions under 50 mA of supplied current and to have 440 Hz of natural frequency. For the application to PDS devices, electromagnetic stage should have flat top surface for the prevention of its interference with multi-probe array, and have coils with low resistance for low power consumption. In order to satisfy these design criteria, conducting planar copper coils have been electroplated within silicon trenches which have high aspect ratio (5 µm in width and 30 µ µ µ µm in depth). Silicon flexures with a height of 250 µm were fabricated by using inductively coupled plasma reactive ion etching (ICP-RIE). The characteristics of a fabricated electromagnetic stage were measured by using laser doppler vibrometer (LDV) and dynamic signal analyzer (DSA). The DC gain was 0.16 µm/mA and the maximum displacement was 42 µ µ µ µm at a current of 180 mA. The measured natural frequency of the lowest mode was 325 Hz. Compared with the designed values, the lower natural frequency and DC gain of the fabricated device are due to the reverse- tapered ICP-RIE process and the incomplete assembly of the upper-sided permanent magnets for LDV measurements.
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Full copper wiring in a sub-0.25 μm CMOS ULSI technology
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Ultrahigh-density atomic force microscopy data storage with erase capability
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