Journal of Electronic Materials · 2024 · 12 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsTransistor BiasingDual-gate Field-effect TransistorsField-effect Transistor Transfer CharacteristicsGate Oxide Thickness EffectsNegative Capacitance Field-effect TransistorsThreshold Voltage Roll-off
28
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations
Engineering, Electrical Engineering, Electronic Materials +13